IGBT串聯(lián)用的有源電壓控制技術(shù)

5 結(jié)論

通過(guò)以上實(shí)驗(yàn)結(jié)果和分析，表明了有源電壓控制技術(shù)是實(shí)現(xiàn)IGBT可靠串聯(lián)的一種良好的方案。另一方面，在較高工作頻率下，采用低耐壓器件串聯(lián)比采用單只高耐壓器件具有多種好處，包括低損耗、低成本、高冗余度等?？紤]到在目前的技術(shù)條件下，單個(gè)IGBT器件的耐壓值再繼續(xù)提高難度很大，所以能夠?qū)崿F(xiàn)IGBT器件可靠串聯(lián)的有緣電壓控制技術(shù)具有廣泛的應(yīng)用空間。

[附錄]

Ps即Pswitching，是單個(gè)IGBT的開關(guān)損耗：Pswitching=( Eon+ Eoff)*f

Pc即Pconduction，是單個(gè)IGBT的導(dǎo)通損耗：

Pconduction=VCE,on*Ic*D

其中D為占空比，設(shè)定為50%，則平均的Pconduction應(yīng)為：

Pconduction=VCE,on*Ic*0.5

Pts即Ptotal,single，是單個(gè)IGBT的總功率損耗：Ptotal=Pswitching+ Pconduction

Pt即Ptotal，是串、并聯(lián)后每個(gè)方案中IGBT的

總功率損耗：

Ptotal=Ptotal,single*N

其中N是串、并聯(lián)個(gè)數(shù)。

參考文獻(xiàn)

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